| PART |
Description |
Maker |
| PPFL3803M |
N Channel MOSFET; Package: TO-254; ID (A): 35; RDS(on) (Ohms): 0.0095; PD (W): 150; BVDSS (V): 30; Rq: 0.83; 35 A, 30 V, 0.0095 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
|
Microsemi, Corp.
|
| HUF76443P3 HUF76443S3S |
75A, 60V, 0.0095 Ohm, N-Channel, Logic Level UltraFETPower MOSFET
75A, 60V, 0.0095 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
|
Fairchild Semiconductor
http://
|
| STD40NF3LL |
N-CHANNEL 30V - 0.0095 OHM - 40A DPAK LOW GATE CHARGE STRIPFET POWER MOSFET
|
ST Microelectronics
|
| SUR50N024-06P-T4-E3 |
80 A, 24 V, 0.0095 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 TO-252, DPAK-3
|
Vishay Intertechnology, Inc.
|
| MTB75N05HD_D ON2454 MTB75N05HDT4 |
75 A, 50 V, 0.0095 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
TMOS POWER FET 75 AMPERES 50 VOLTS
|
MOTOROLA INC
ON Semi
|
| IRFU3707ZPBF IRFR3707ZTRPBF |
30 A, 30 V, 0.0095 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
HEXFETPower MOSFET
|
International Rectifier
|
| ITE08C06 ITE08F06 |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 8A I(C) | TO-247AA
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 8A I(C) | TO-220AB 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展| 8A条一（c）| TO - 220AB现有
|
Continental Device India, Ltd.
|
| ISL9G1260EP3 ISL9G1260ES3 |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-220AB
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-263AB 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展|甲一（c）|63AB
|
Hynix Semiconductor, Inc.
|
| FF75R10KN FF150R10KN FF100R10KN FS50R10KF2 FS8R06K |
TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 75A I(C) | M:HL093HD5.6
TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 150A I(C) | M:HL093HW048
TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 100A I(C) | M:HL093HW048
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1KV V(BR)CES | 50A I(C)
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 8A I(C) 晶体管| IGBT功率模块| 3 - PH值大桥| 600V的五（巴西）国际消费电子展| 8A条一（c
TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 15A I(C) | M:HL080HD5.3 晶体管| IGBT的|正陈|双| 1KV交五（巴西）国际消费电子展|5A一（c）|米：HL080HD5.3
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 75A I(C) 晶体管| IGBT功率模块| 3 - PH值大桥| 600V的五（巴西）国际消费电子展| 75A条一（c
|
Delta Electronics, Inc.
Fuji Electric Holdings Co., Ltd.
Infineon Technologies AG
|
| CG3310 ECG3323 ECG3312 |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 25A I(C) | TO-247VAR
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 8A I(C) | TO-247VAR
|
|
| POT3107Z-1-200 POT3107Z-1-100 POT3107Z-1-104 POT31 |
RESISTOR, TRIMMER, CERMET, 12 TURN(S), 0.25 W, 20 ohm
RESISTOR, TRIMMER, CERMET, 12 TURN(S), 0.25 W, 10 ohm
RESISTOR, TRIMMER, CERMET, 12 TURN(S), 0.25 W, 100000 ohm
RESISTOR, TRIMMER, CERMET, 12 TURN(S), 0.25 W, 200000 ohm
RESISTOR, TRIMMER, CERMET, 12 TURN(S), 0.25 W, 250000 ohm
RESISTOR, TRIMMER, CERMET, 12 TURN(S), 0.25 W, 500000 ohm
RESISTOR, TRIMMER, CERMET, 12 TURN(S), 0.25 W, 1000 ohm
RESISTOR, TRIMMER, CERMET, 12 TURN(S), 0.25 W, 200 ohm
RESISTOR, TRIMMER, CERMET, 12 TURN(S), 0.25 W, 2000 ohm
RESISTOR, TRIMMER, CERMET, 12 TURN(S), 0.25 W, 20000 ohm
RESISTOR, TRIMMER, CERMET, 12 TURN(S), 0.25 W, 25000 ohm
RESISTOR, TRIMMER, CERMET, 12 TURN(S), 0.25 W, 5000 ohm
RESISTOR, TRIMMER, CERMET, 12 TURN(S), 0.25 W, 500 ohm
RESISTOR, TRIMMER, CERMET, 12 TURN(S), 0.25 W, 50 ohm
RESISTOR, TRIMMER, CERMET, 12 TURN(S), 0.25 W, 50000 ohm
|
Murata Manufacturing Co., Ltd.
|
|
